MRF8P9300HR6 MRF8P9300HSR6
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2009
?
Initial Release of Data Sheet
1
May 2010
?
Changed ESD Human Body Model rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
?
Added Alternate Characterization for 865--895 MHz Frequency Band as follows:
-- Typical Performance bullet, p. 1
-- Typical Broadband Performance table, p. 3
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 10
-- Fig. 14, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout
= 100 Watts
Avg.,p.11
-- Fig. 15, Single--Carrier W--CDMA Power Gain, Drain, Efficiency and ACPR versus Output Power, p. 11
-- Fig. 16, Broadband Frequency Response, p. 11
-- Fig. 17, Series Equivalent Source and Load Impedance, p. 12
1.1
July 2010
?
Changed 850 MHz to 880 MHz in the Typical Broadband Performance table for the 865--895 MHz frequency
band, p. 3
?
Added connection pad identifiers to Fig. 2, Test Circuit Component Layout, p. 4
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功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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